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this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 1 EN25T16A rev. c , issue date: 2011 / 04 / 15 features ? single power supply operation - full voltage range: 2.7-3.6 volt ? serial interface architecture - spi compatible: mode 0 and mode 3 ? 16 mbit serial flash - 16 m-bit/2048 k-byte/8192 pages - 256 bytes per programmable page ? high performance - 75mhz clock rate - dual data mode ? low power consumption - 12 ma typical active current - 1 a typical power down current ? uniform sector architecture: - 512 sectors of 4-kbyte - 32 blocks of 64-kbyte - any sector or block can be erased individually ? software and hardware write protection: - write protect all or portion of memory via software - enable/disable protection with wp# pin ? high performance program/erase speed - page program time: 1.3ms typical - sector erase time: 60ms typical - block erase time 400ms typical - chip erase time: 7 seconds typical ? lockable 512 byte otp security sector ? minimum 100k endurance cycle ? package options - 8 pins sop 200mil body width - 8 pins pdip - 8 contact vdfn ? industrial temperature range general description the EN25T16A is a 16m-bit (2048k-byte) serial flash memory, with advanced write protection mechanisms, accessed by a high speed spi-compatible bus. the memory can be programmed 1 to 256 bytes at a time, using the page program instruction. the EN25T16A is designed to allow either single sect or/block at a time or full chip erase operation. the EN25T16A can be configured to protect part of the me mory as the software protected mode. the device can sustain a minimum of 100k program/erase cycles on each sector or block. EN25T16A 16 megabit uniform sector, serial flash memory with dual data mode
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 2 EN25T16A rev. c , issue date: 2011 / 04 / 15 figure.1 connection diagrams figure 2. block diagram 8 - lead sop / pdip 8 - contact vdfn
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 3 EN25T16A rev. c , issue date: 2011 / 04 / 15 signal description serial data input (di) the spi serial data input (di) pin provides a means for instructions, addresses and data to be serially written to (shifted into) the device. data is latched on the rising edge of the serial clock (clk) input pin. serial data output (do) the spi serial data output (do) pin provides a means for data and status to be serially read from (shifted out of) the device. data is shifted out on the falling edge of the serial clock (clk) input pin. serial clock (clk) the spi serial clock input (clk) pin provides the timing for serial input and output operations. ("see spi mode") chip select (cs#) the spi chip select (cs#) pin enables and disables device operation. when cs# is high the device is deselected and the serial data output (do) pin is at high impedance. when deselected, the devices power consumption will be at standby levels unless an internal erase, program or status register cycle is in progress. when cs# is brought low the device will be selected, power cons umption will increase to active levels and instructions can be written to and data read from the device. after power-up, cs# must transition from high to low before a new instruction will be accepted. hold (hold#) the hold pin allows the device to be paused while it is actively selected. when hold is brought low, while cs# is low, the do pin will be at high impedance and signals on the di and c lk pins will be ignored (don?t care). the hold function can be useful when multiple devices are sharing the same spi signals. write protect (wp#) the write protect (wp#) pin can be used to prevent the status register from being written. used in conjunction with the status register?s block protect (bp0, bp1and bp2) bits and status register protect (srp) bits, a portion or the entire memory array can be hardware protected. table 1. pin names symbol pin name clk serial clock input di serial data input do serial data output cs# chip enable wp# write protect hold# hold input vcc supply voltage (2.7-3.6v) vss ground
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 4 EN25T16A rev. c , issue date: 2011 / 04 / 15 memory organization the memory is organized as: z 2,097,152 bytes z uniform sector architecture 32 blocks of 64-kbyte 512 sectors of 4-kbyte z 8192 pages (256 bytes each) each page can be individually programmed (bits are programmed from 1 to 0). the device is sector, block or chip erasable but not page erasable. table 2. uniform block sector architecture block sector address range 511 1ff000 1fffff ?. ?. ?. 31 496 1f0000 1f0fff 495 1ef000 1effff ?. ?. ?. 30 480 1e0000 1e0fff 479 1df000 1dffff ?. ?. ?. 29 464 1d0000 1d0fff 463 1cf000 1cffff ?. ?. ?. 28 448 1c0000 1c0fff 447 1bf000 1bffff ?. ?. ?. 27 432 1b0000 1b0fff 431 1af000 1affff ?. ?. ?. 26 416 200000 200fff 415 19f000 19ffff ?. ?. ?. 25 400 190000 190fff 399 18f000 18ffff ?. ?. ?. 24 384 180000 180fff 383 17f000 17ffff ?. ?. ?. 23 368 170000 170fff 367 16f000 16ffff ?. ?. ?. 22 352 160000 160fff 351 15f000 15ffff ?. ?. ?. 21 336 150000 150fff 335 14f000 14ffff ?. ?. ?. 20 320 140000 140fff 319 13f000 13ffff ?. ?. ?. 19 304 130000 130fff 303 12f000 12ffff ?. ?. ?. 18 288 120000 120fff 287 11f000 11ffff ?. ?. ?. 17 272 110000 110fff 271 10f000 10ffff ?. ?. ?. 16 256 100000 100fff
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 5 EN25T16A rev. c , issue date: 2011 / 04 / 15 255 0ff000h 0fffffh ?. ?. ?. 15 240 0f0000h 0f0fffh 239 0ef000h 0effffh ?. ?. ?. 14 224 0e0000h 0e0fffh 223 0df000h 0dffffh ?. ?. ?. 13 208 0d0000h 0d0fffh 207 0cf000h 0cffffh ?. ?. ?. 12 192 0c0000h 0c0fffh 191 0bf000h 0bffffh ?. ?. ?. 11 176 0b0000h 0b0fffh 175 0af000h 0affffh ?. ?. ?. 10 160 0a0000h 0a0fffh 159 09f000h 09ffffh ?. ?. ?. 9 144 090000h 090fffh 143 08f000h 08ffffh ?. ?. ?. 8 128 080000h 080fffh 127 07f000h 07ffffh ?. ?. ?. 7 112 070000h 070fffh 111 06f000h 06ffffh ?. ?. ?. 6 96 060000h 060fffh 95 05f000h 05ffffh ?. ?. ?. 5 80 050000h 050fffh 79 04f000h 04ffffh ?. ?. ?. 4 64 040000h 040fffh 63 03f000h 03ffffh ?. ?. ?. 3 48 030000h 030fffh 47 02f000h 02ffffh ?. ?. ?. 2 32 020000h 020fffh 31 01f000h 01ffffh ?. ?. ?. 1 16 010000h 010fffh 15 00f000h 00ffffh ?. ?. ?. 4 004000h 004fffh 3 003000h 003fffh 2 002000h 002fffh 1 001000h 001fffh 0 0 000000h 000fffh
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 6 EN25T16A rev. c , issue date: 2011 / 04 / 15 operating features spi modes the EN25T16A is accessed through an spi compatible bus consisting of four signals: serial clock (clk), chip select (cs#), serial data input (di) and serial data output (do). both spi bus operation modes 0 (0,0) and 3 (1,1) are supported. the primary difference between mode 0 and mode 3, as shown in figure 3, concerns the normal state of the clk signal when the spi bus master is in standby and data is not being transferred to the serial flash. for mode 0 the clk signal is normally low. for mode 3 the clk signal is normally high. in either case data input on the di pin is sampled on the rising edge of the clk. data output on the do pi n is clocked out on the falling edge of clk. figure 3. spi modes page programming to program one data byte, two instructions are required: write enable (wren), which is one byte, and a page program (pp) sequence, which consists of four bytes plus data. this is followed by the internal program cycle (of duration t pp ). to spread this overhead, the page program (pp) instruction allows up to 256 bytes to be programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive addresses on the same page of memory. sector erase, block erase and chip erase the page program (pp) instruction allows bits to be reset from 1 to 0. before this can be applied, the bytes of memory need to have been erased to all 1s (ffh). this can be achieved a sector at a time, using the sector erase (se) instruction, a block at a time using the block erase (be) instruction or throughout the entire memory, using the chip erase (ce) instruction. this starts an internal erase cycle (of duration t se t be or t ce ). the erase instruction must be preceded by a write enable (wren) instruction. polling during a write, program or erase cycle a further improvement in the time to write status register (wrsr), program (pp) or erase (se, be or ce ) can be achieved by not waiting for the worst case delay (t w , t pp , t se , t be or t ce ). the write in progress (wip) bit is provided in the status register so that the application program can monitor its value, polling it to estab lish when the previous write cycle, prog ram cycle or erase cycle is complete. active power, stand-by power and deep power-down modes when chip select (cs#) is low, the device is enabled, and in the active power mode. when chip select (cs#) is high, the device is disabled, but could remain in the active power mode until all internal cycles have completed (program, erase, write status register). the device then goes into the stand- by power mode. the device consumption drops to i cc1 . the deep power-down mode is entered when the specific instruction (the enter deep power-down mode (dp) instruction) is executed. the device consumption drops further to i cc2 . the device remains in this mode until another specif ic instruction (the release from deep power-down mode and read device id (rdi) instruction) is executed.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 7 EN25T16A rev. c , issue date: 2011 / 04 / 15 all other instructions are ignored while the device is in the deep power-down mode. this can be used as an extra software protection mechanism, when the device is not in active use, to protect the device from inadvertent write, program or erase instructions. status register. the status register contains a number of status and control bits that can be read or set (as appropriate) by sp ecific instructions. wip bit. the write in progress (wip) bit indicates whethe r the memory is busy with a write status register, program or erase cycle. wel bit. the write enable latch (wel) bit indicates the status of the internal write enable latch. bp2, bp1, bp0 bits. the block protect (bp2, bp1, bp0) bits are non-volatile. they define the size of the area to be software protected against program and erase instructions. mode1, mode0 bits. default value is spi mode (00), user can change this value by change mode commands to change the interface mode. this device also support sp2 mode (01). sp2 mode : command/address/data all transmitting with 2 bits srp bit / otp_lock bit the status register protect (srp) bit is operated in conjunction with the write protect (wp#) signal. the status register protect (srp) bit and write protect (wp#) signal allow the device to be put in the hardware protected mode. in this mode, the non-volatile bits of the status register (srp, bp2, bp1, bp0) become read-only bits. in otp mode, this bit is served as otp_lock bit, user can read/program/erase otp sector as normal sector while otp_lock bit value is equal 0, after otp_lock bit is programmed with 1 by wrsr command, the otp sector is protected from program and erase operation. the otp_lock bit can only be programmed once. note : in otp mode, the wrsr command will ignore any input data and program otp_lock bit to 1, user must clear the protect bits before enter otp mode and program the otp code, then execute wrsr command to lock the otp sector before leaving otp mode. write protection applications that use non-volatile me mory must take into consideratio n the possibility of noise and other adverse system conditions that may compromise data integrity. to address this concern the EN25T16A provides the following data protection mechanisms: z power-on reset and an internal timer (t puw ) can provide protection against inadvertent changes while the power supply is outside the operating specification. z program, erase and write status register instructions are checked that they consist of a number of clock pulses that is a multiple of eight, before they are accepted for execution. z all instructions that modify data must be preceded by a write enable (wren) instruction to set the write enable latch (wel) bit . this bit is returned to its reset state by the following events: ? power-up ? write disable (wrdi) instruction completion or write status register (wrsr) instruction completion or page program (pp) instruction completion or sector erase (se)instruction completion or block erase (be) instruction completion or chip erase (ce) instruction completion z the block protect (bp2, bp1, bp0) bits allow part of the memory to be configured as read-only. this is the software protected mode (spm). z the write protect (wp#) signal allows the block protect (bp2, bp1, bp0) bits and status register protect (srp) bit to be protected. this is the hardware protected mode (hpm). z in addition to the low power consumption feature, the deep power-down mode offers extra software protection from inadvertent write, program and erase instructions, as all instructions are ignored except one particular instruction (the release from deep power-down instruction).
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 8 EN25T16A rev. c , issue date: 2011 / 04 / 15 table 3. protected area sizes sector organization status register content memory content bp2 bit bp1 bit bp0 bit protect areas addresses density(kb) portion 0 0 0 none none none none 0 0 1 block 0 to 30 000000h-1effffh 1984kb lower 31/32 0 1 0 block 0 to 29 000000h-1dffffh 1920kb lower 30/32 0 1 1 block 0 to 27 000000h-1bffffh 1792kb lower 28/32 1 0 0 block 0 to 23 000000h-17ffffh 1536kb lower 24/32 1 0 1 block 0 to 15 000000h-0fffffh 1024kb lower 16/32 1 1 0 all 000000h-1fffffh 2048kb all 1 1 1 all 000000h-1fffffh 2048kb all hold function the hold (hold) signal is used to pause any serial communications with the device without resetting the clocking sequence. however, taking this signal low does not terminate any write status register, program or erase cycle that is currently in progress. to enter the hold condition, the device must be selected, with chip select (cs#) low. the hold condition starts on the falling edge of the hold (hold) signal, provided that this coincides with serial clock (clk) being low (as shown in figure 4.). the hold condition ends on the rising edge of the hold (hold) signal, provided that this coincides with serial clock (clk) being low. if the falling edge does not coincide with serial cloc k (clk) being low, the hold condition starts after serial clock (clk) next goes low. similarly, if the rising edge does not coincide with serial clock (clk) being low, the hold condition ends after serial clock (clk) next goes low. (this is shown in figure 4.). during the hold condition, the serial data output (do) is high impedance, and serial data input (di) and serial clock (clk) are don?t care. normally, the device is kept selected, with chip select (cs#) driven low, for the whole duration of the hold condition. this is to ensure that the state of the internal logic remains unchanged from the mo- ment of entering the hold condition. if chip select (cs#) goes high while the device is in the hold condition, this has the effect of resetting the internal logic of the device. to restart communication with the device, it is necessary to drive hold (hold) high, and then to drive chip select (cs#) low. this prevents the device from going back to the hold condition. figure 4. hold condition waveform
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 9 EN25T16A rev. c , issue date: 2011 / 04 / 15 instructions all instructions, addresses and data are shifted in and out of the device, most significant bit first. serial data input (di) is sampled on the first rising edge of serial clock (clk) after chip select (cs#) is driven low. then, the one-byte instruction code must be shifted in to the device, most significant bit first, on serial data input (di), each bit being latched on the rising edges of serial clock (clk). the instruction set is listed in tabl e 4. every instruction sequence st arts with a one-byte instruction code. depending on the instruction, this might be followed by address bytes, or by data bytes, or by both or none. chip select (cs#) must be driven high after the last bit of the instruction sequence has been shifted in. in the case of a read data bytes (read), read data bytes at higher speed (fast_read), read status register (rdsr) or release from deep power-down, and read device id (rdi) instruction, the shifted-in in struction sequence is followed by a data-out sequence. chip select (cs#) can be driven high after any bit of the data-out sequence is being shifted out. in the case of a page program (pp), sector erase (se), block erase (be), chip erase (ce), write status register (wrsr), write enable (wren), write disable (wrdi) or deep power-down (dp) instruction, chip select (cs#) must be driven high exactly at a byte boundary, otherwise the instruction is rejected, and is not executed. that is, chip select (cs#) must driven high when the number of clock pulses after chip select (cs#) being driven low is an exact multiple of eight. for page program, if at any time the input byte is not a full byte, no thing will hap pen and wel will not be reset. in the case of multi-byte commands of page program (pp), and release from deep power down (res ) minimum number of bytes specified has to be given, without which, the command will be ignored. in the case of page program, if the number of byte after the command is less than 4 (at least 1 data byte), it will be ignored too. in the case of se and be, exact 24-bit address is a must, any less or more will cause the command to be ignored. all attempts to access the memory array during a writ e status register cycle, program cycle or erase cycle are ignored, and the internal write status register cycle, program cycle or erase cycle continues unaffected.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 10 EN25T16A rev. c , issue date: 2011 / 04 / 15 table 4. instruction set instruction name byte 1 code byte 2 byte 3 byte 4 byte 5 byte 6 n-bytes write enable 06h write disable / exit ext / otp mode 04h read status register 05h (s7-s0) (1) continuous (2) write status register 01h s7-s0 read data 03h a23-a16 a15-a8 a7-a0 (d7-d0) (next byte) continuous fast read 0bh a23-a16 a15-a8 a7-a0 dummy (d7-d0) (next byte) continuous page program 02h a23-a16 a15-a8 a7-a0 d7-d0 next byte continuous sector erase / otp erase 20h a23-a16 a15-a8 a7-a0 block erase d8h a23-a16 a15-a8 a7-a0 chip erase c7h/ 60h deep power-down b9h release from deep power-down, and read device id dummy dummy dummy (id7-id0) (3) release from deep power-down abh 00h (m7-m0) (id7-id0) manufacturer/ device id 90h dummy dummy 01h (id7-id0) (m7-m0) (4) read identification 9fh (m7-m0) (id15-id8) (id7-id0) (5) enter ext mode 0ah enter otp mode 3ah notes: 1. data bytes are shifted with most significant bit first. byte fields with data in parenthesis ?( )? indicate data being read from the device on the do pin. 2. the status register contents will repeat continuously until cs# terminate the instruction. 3. the device id will repeat continuously until cs# terminate the instruction. 4. the manufacturer id and device id bytes will repeat continuously until cs# terminate the instruction. 00h on byte 4 starts with mid and alternate with did, 01h on byte 4 starts with did and alternate with mid. 5. (m7-m0) : manufacturer, (id15-id8) : memory type, (id7-id0) : memory capacity table 5. manufacturer and device identification op code (m7-m0) (id15-id0) (id7-id0) abh 14h 90h 1ch 14h 9fh 1ch 5115h
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 11 EN25T16A rev. c , issue date: 2011 / 04 / 15 write enable (wren) (06h) the write enable (wren) instruction (figure 5) sets the write enable latch (wel) bit. the write enable latch (wel) bit must be set prior to every page program (pp), sector erase (se), block erase (be), chip erase (ce) and write status register (wrsr) instruction. the write enable (wren) instruction is entered by driving chip select (cs#) low, sending the instruction code, and then driv ing chip select (cs#) high. figure 5. write enable instruction sequence diagram write disable (wrdi) (04h) the write disable instruction (figure 6) resets the write enable latch (wel) bit in the status register to a 0 or exit from ext / otp mode to normal mode. the write disable instruction is entered by driving chip select (cs#) low, shifting the instruction code ?04h? into the di pin and then driving chip select (cs#) high. note that the wel bit is automatically reset after power-up and upon completion of the write status register, page program, sector erase, block erase (be) and chip erase instructions. figure 6. write disable instruction sequence diagram
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 12 EN25T16A rev. c , issue date: 2011 / 04 / 15 figure 6.1 write disable instruction sequence diagram of sp2 mode read status register (rdsr) (05h) the read status register (rdsr) instruction allows the status register to be read. the status register may be read at any time, even while a program, erase or write status register cycle is in progress. when one of these cycles is in progress, it is recommended to check the write in progress (wip) bit before sending a new instruction to the device. it is also possible to read the status register continuously, as shown in figure 7. figure 7. read status register instruction sequence diagram figure 7.1 read status register instruction sequence diagram of sp2 mode
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 13 EN25T16A rev. c , issue date: 2011 / 04 / 15 table 6. status register bit locations s7 s6 s5 s4 s3 s2 s1 s0 srp status register protect otp_lock bit (note 1) bp2 (block protected bits) bp1 (block protected bits) bp0 (block protected bits) wel (write enable latch) wip (write in progress bit) 1 = status register write disable 1 = otp sector is protected (note 2) (note 2) (note 2) 1 = write enable 0 = not write enable 1 = write operation 0 = not in write operation non-volatile bit mode 1 mode 0 non-volatile bit non-volatile bit non-volatile bit volatile bit volatile bit note 1. in otp mode, srp bit is served as otp_lock bit. 2. see the table ? protected area sizes sector organization?. the status and control bits of the status register are as follows: wip bit. the write in progress (wip) bit indicates whether the memory is busy with a write status register, program or erase cycle. when set to 1, such a cycle is in progress, when reset to 0 no such cycle is in progress. wel bit. the write enable latch (wel) bit indicates the status of the internal write enable latch. when set to 1 the internal write enable latch is set, when set to 0 the internal write enable latch is reset and no write status register, program or erase instruction is accepted. bp2, bp1, bp0 bits. the block protect (bp2, bp1, bp0) bits are non-volatile. they define the size of the area to be software protected against program and erase instructions. these bits are written with the write status register (wrsr) instruction. when one or both of the block protect (bp2, bp1, bp0) bits is set to 1, the relevant memory area (as defined in table 3.) becomes protected against page program (pp) sector erase (se) and , block erase (be), instructions. the block protect (bp2, bp1, bp0) bits can be written provided that the hardware protected mode has not been set. the chip erase (ce) instruction is executed if, and only if, all block protect (bp2, bp1, bp0) bits are 0. mode1, mode0 bits. default value is spi mode (00), user can change this value by change mode commands to change the interface mode. this device also support sp2 mode (01). srp bit / otp_lock bit. the status register protect (srp) bit is operated in conjunction with the write protect (wp#) signal. the status register write protect (srp) bit and write protect (wp#) signal allow the device to be put in the hardware protected mode (when the status register protect (srp) bit is set to 1, and write protect (wp#) is driven low). in this mode, the non-volatile bits of the status register (srp, bp2, bp1, bp0) become read-only bits and the write status register (wrsr) instruction is no longer accepted for execution. in otp mode, this bit is served as otp_lock bit, user can read/program/erase otp sector as normal sector while otp_lock value is equal 0, after otp_lock is programmed with 1 by wrsr command, the otp sector is protected from program and erase operation. the otp_lock bit can only be programmed once. note : in otp mode, the wrsr command will ignore any input data and program otp_lock bit to 1, user must clear the protect bits before enter otp mode and program the otp code, then execute wrsr command to lock the otp sector before leaving otp mode.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 14 EN25T16A rev. c , issue date: 2011 / 04 / 15 write status register (wrsr) (01h) the write status register (wrsr) instruction allows new values to be written to the status register. before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded and executed, the device sets the write enable latch (wel). the write status register (wrsr) instruction is ente red by driving chip select (cs#) low, followed by the instruction code and the data byte on serial data input (di). the instruction sequence is shown in figure 8. the write status register (wrsr) instruction has no effect on s6, s5, s1 and s0 of the status register. s6 and s5 are always read as 0. chip select (cs#) must be driven high after the eighth bit of the data byte has been latched in. if not, the write status register (wrsr) instruction is not executed. as soon as chip select (cs#) is driven high, the self- timed write status register cycle (whose duration is t w ) is initiated. while the write status register cycle is in progress, the status register may still be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed write status register cycle, and is 0 when it is completed. when the cycle is comp leted, the write enable latch (wel) is reset. the write status register (wrsr) instruction allows the user to change the values of the block protect (bp2, bp1, bp0) bits, to define the size of the area that is to be treated as read-only, as defined in table 3.. the write status register (wrsr) instruction also allows the user to set or reset the status register protect (srp) bit in accordance with the write protect (wp#) signal. the status register protect (srp) bit and write protect (wp#) signal allow the device to be put in the hardware protected mode (hpm). the write status register (wrsr) instruction is not executed once the hardware protected mode (hpm) is entered. note : in the otp mode, wrsr command will igno re input data and program otp_lock bit to 1. figure 8. write status register instruction sequence diagram read data bytes (read) (03h) the device is first selected by driving chip select (cs#) low. the instruction code for the read data bytes (read) instruction is followed by a 3-byte addr ess (a23-a0), each bit being latched-in during the rising edge of serial clock (clk). then the memory contents, at that address, is shifted out on serial data output (do), each bit being shifted out, at a maximum frequency f r , during the falling edge of serial clock (clk). the instruction sequence is shown in figure 9. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. the whole memory can, therefore, be read with a single read data bytes (read) instruction. when the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. the read data bytes (read) instruction is terminated by driving chip select (c s#) high. chip select (cs#) can be driven high at any time during data output. any read data bytes (read) instruction, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 15 EN25T16A rev. c , issue date: 2011 / 04 / 15 figure 9. read data instruction sequence diagram read data bytes at higher speed (fast_read) (0bh) the device is first selected by driving chip select (cs#) low. the instruction code for the read data bytes at higher speed (fast_read) instruction is followed by a 3-byte address (a23-a0) and a dummy byte, each bit being latched-in during the rising edge of serial clock (clk). then the memory contents, at that address, is shifted out on serial data output (do), each bit being shifted out, at a maximum frequency f r , during the falling edge of serial clock (clk). the instruction sequence is shown in figure 10 and figure 10.1 for spi mode and sp2 mode. the first byte addressed can be at any location. the address is automatically incremented to the next higher address after each byte of data is shifted out. the whole memory can, therefore, be read with a single read data bytes at higher speed (fast_read) instruction. when the highest address is reached, the address counter rolls over to 000000h, allowing the read sequence to be continued indefinitely. the read data bytes at higher speed (fast_read) instruction is terminated by driving chip select (cs#) high. chip select (cs#) can be driven high at any time during data output. any read data bytes at higher speed (fast_read) instruction, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress. notes : the number of dummy cycles in spi and sp2 mode are eight and four.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 16 EN25T16A rev. c , issue date: 2011 / 04 / 15 figure 10. fast read instruction sequence diagram figure 10.1 fast read instruction sequence diagram of sp2 mode
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 17 EN25T16A rev. c , issue date: 2011 / 04 / 15 page program (pp) (02h) the page program (pp) instruction allows bytes to be programmed in the memory. before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel). the page program (pp) instruction is entered by driving chip select (cs#) low, followed by the in- struction code, three address bytes and at least one da ta byte on serial data input (di). if the 8 least significant address bits (a7-a0) are not all zero, all transmitted data that goes beyond the end of the current page are programmed from the start address of the same page (from the address whose 8 least significant bits (a7-a0) are all zero). chip select (cs#) must be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 11. if more than 256 bytes are sent to the device, pre- viously latched data are discarded and the last 256 data bytes are guaranteed to be programmed cor- rectly within the same page. if less than 256 data bytes are sent to device, they are correctly pro- grammed at the requested addresses without having any effects on the other bytes of the same page. chip select (cs#) must be driven high after the eighth bit of the last data byte has been latched in, otherwise the page program (pp) instruction is not executed. as soon as chip select (cs#) is driven high, the self-timed page program cycle (whose duration is tpp) is initiated. while the page program cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed page program cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a page program (pp) instruction applied to a page which is protected by the block protect (bp2, bp1, bp0) bits (see table 3) is not executed. figure 11. page program instruction sequence diagram
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 18 EN25T16A rev. c , issue date: 2011 / 04 / 15 sector erase (se) (20h) the sector erase (se) instruction sets to 1 (ffh) all bits inside the chosen sector. before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel). the sector erase (se) instruction is entered by d riving chip select (cs#) low, followed by the in- struction code, and three address bytes on serial data input (di). any address inside the sector (see table 2) is a valid address for the sector erase (se) instruction. chip select (cs#) must be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 12. chip select (cs#) must be driven high after the eighth bit of the last address byte has been latched in, otherwise the sector erase (se) instruction is not executed. as soon as chip select (cs#) is driven high, the self-timed sector erase cycle (whose du- ration is t se ) is initiated. while the sector erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed sector erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a sector erase (se) instruction applied to a sector which is protected by the block protect (bp2, bp1, bp0) bits (see table 3) is not executed. figure 12. sector erase instruction sequence diagram block erase (be) (d8h) the block erase (be) instruction sets to 1 (ffh) all bits inside the chosen block. before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel). the block erase (be) instruction is entered by driving chip select (cs#) low, followed by the in- struction code, and three address bytes on serial data input (di). any address inside the block (see table 2) is a valid address for the block erase (be) instruction. chip select (cs#) must be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 13. chip select (cs#) must be driven high after the eighth bit of the last address byte has been latched in, otherwise the block erase (be) instruction is not executed. as soon as chip select (cs#) is driven high, the self-timed block erase cycle (whose du- ration is t se ) is initiated. while the block erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. th e write in progress (wip) bit is 1 during the self- timed block erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. a block erase (be) instruction applied to a block which is protected by the block protect (bp2, bp1, bp0) bits (see table 3) is not executed.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 19 EN25T16A rev. c , issue date: 2011 / 04 / 15 figure 13 block erase instruction sequence diagram chip erase (ce) (c7h/60h) the chip erase (ce) instruction sets all bits to 1 (ffh). before it can be accepted, a write enable (wren) instruction must previously have been executed. after the write enable (wren) instruction has been decoded, the device sets the write enable latch (wel). the chip erase (ce) instruction is entered by driving chip select (c s#) low, followed by the instructio n code on serial data input (di). chip select (cs#) must be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 14. chip select (cs#) must be driven high after the eighth bit of the instruction code has been latched in, otherwise the chip erase instruction is not executed. as soon as chip select (cs#) is d riven high, the self-timed chip erase cycle (whose duration is t ce ) is initiated. while the chip erase cycle is in progress, the status register may be read to check the value of the write in progress (wip) bit. the write in progress (wip) bit is 1 during the self-timed chip erase cycle, and is 0 when it is completed. at some unspecified time before the cycle is completed, the write enable latch (wel) bit is reset. the chip erase (ce) instruction is executed only if all block protect (bp2, bp1, bp0) bits are 0. the chip erase (ce) instruction is ignored if one, or more, sectors are protected. figure 14. chip erase instruction sequence diagram
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 20 EN25T16A rev. c , issue date: 2011 / 04 / 15 deep power-down (dp) (b9h) executing the deep power-down (dp) instruction is the only way to put the device in the lowest con- sumption mode (the deep power-down mode). it can also be used as an extra software protection mechanism, while the device is not in active use, since in this mode, the device ignores all write, program and erase instructions. driving chip select (cs#) high deselects the device, and puts the device in the standby mode (if there is no internal cycle currently in progress). but this mode is not the deep power-down mode. the deep power-down mode can only be entered by executing the deep power-down (dp) instruction, to reduce the standby current (from icc1 to icc2, as specified in table 10.). once the device has entered the deep power-down mode, all instructions are ignored except the release from deep power-down and read device id (rdi) instruction. this releases the device from this mode. the release from deep power-down and read device id (rdi) instruction also allows the device id of the device to be output on serial data output (do). the deep power-down mode automatically stops at power-down, and the device always powers-up in the standby mode. the deep power-down (dp) instruction is entered by driving chip select (cs#) low, followed by the instruction code on serial data input (di). chip select (cs#) mu st be driven low for the entire duration of the sequence. the instruction sequence is shown in figure 15. chip select (cs#) must be driven high after the eighth bit of the instruction code has been latched in, otherwise the deep power-down (dp) instruction is not executed. as soon as chip select (cs#) is driven high, it requires a delay of t dp before the supply current is reduced to icc2 and the deep power-down mode is entered. any deep power-down (dp) instruction, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress. figure 15. deep power-down instruction sequence diagram release from deep power-down and read device id (rdi) once the device has entered the deep power-down mode, all instructions are ignored except the release from deep power-down and read device id (rdi) instruction. executing this instruction takes the device out of the deep power-down mode. please note that this is not the same as, or even a subset of, the jedec 16-bit electronic signature that is read by the read identifier (rdid) instruction. the old-style electronic signature is supported for reasons of backward compatibility, only, and should not be used for new designs. new designs should, instead, make use of the jedec 16-bit electronic signature, and the read identifier (rdid) instruction. when used only to release the device from the power-down state, the instruction is issued by driving the cs# pin low, shifting the instruction code ?abh? and driving cs# high as shown in figure 16. after the time duration of t res1 (see ac characteristics) the device will resume normal operation and other instructions will be acce pted. the cs# pin must re main high during the t res1 time duration.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 21 EN25T16A rev. c , issue date: 2011 / 04 / 15 when used only to obtain the device id while not in the power-down state, the instruction is initiated by driving the cs# pin low and shifting the instruction code ?abh? followed by 3-dummy bytes. the device id bits are then shifted out on the falling edge of c lk with most significant bit (msb) first as shown in figure 17. the device id value for the EN25T16A are listed in table 5. the device id can be read continuously. the instruction is completed by driving cs# high. when chip select (cs#) is driven high, the device is put in the stand-by power mode. if the device was not previously in the deep power-down mode, the transition to the stand-by power mode is immediate. if the device was previously in the deep power-down mode, though, the transition to the standby power mode is delayed by t res2 , and chip select (cs#) must remain high for at least t res2 (max), as specified in table 12. once in the stand-by power mode, the device waits to be selected, so that it can receive, decode and execute instructions. except while an erase, program or write status register cycle is in progress, the release from deep power-down and read device id (rdi) instruction always provides access to the 8bit device id of the device, and can be applied even if the deep power-down mode has not been entered. any release from deep power-down and read device id (rdi) instruction while an erase, program or write status register cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. figure 16. release power-down instruction sequence diagram figure 17. release power-down / device id instruction sequence diagram
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 22 EN25T16A rev. c , issue date: 2011 / 04 / 15 read manufacturer / device id (90h) the read manufacturer/device id instruction is an alternative to the release from power-down / device id instruction that provides both the jedec assigned manufacturer id and the specific device id. the read manufacturer/device id in struction is very similar to the release from power-down / device id instruction. the instruction is initiated by driving the cs# pin low and shifting the instruction code ?90h? followed by a 24-bit address (a23-a0) of 000000h. after which, the manufacturer id for eon (1ch) and the device id are shifted out on the falling edge of clk with most significant bit (msb) first as shown in figure 18. the device id values for the EN25T16A are listed in table 5. if the 24-bit address is initially set to 000001h the device id will be read first figure 18. read manufacturer / device id diagram read identification (rdid)(9fh) the read identification (rdid) in struction allows the 8-bit manufact urer identification to be read, followed by two bytes of device identification. the device identification indicates the memory type in the first byte , and the memory capacity of the device in the second byte . any read identification (rdid) instruction while an erase or program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress. the read identification (rdid) instruction should not be issued while the device is in deep power down mode. the device is first selected by driving chip select low. then, the 8-bit instruction code for the instruction is shifted in. this is followed by the 24-bit device identification, stored in the memory, being shifted out on serial data output , each bit being shifted out during the fallin g edge of serial clock . the instruction sequence is shown in figure 19. the read identification (rdid) instruction is
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 23 EN25T16A rev. c , issue date: 2011 / 04 / 15 terminated by driving chip select high at any time during data output. when chip select is driven high, the device is put in the standby power mode. once in the standby power mode, the device waits to be selected, so that it can receive, decode and execute instructions. figure 19. read identification (rdid) enter ext mode (0ah) this flash support extend transmission mode to enhance the data throughput, user can use the enter mode commands to switch from normal mode into extend mode and exit by wrdi (04h) command. the enter ext mode command is initiated by executing an 8-bit command 0ah. user can use rdsr command to read the mode bits from status register. table 7. mode table mode[1:0] 00 01 ext mode spi (default) sp2 after power on reset, the mode register will keep at spi mode. sp2 : command/address/data all transmitting with 2 bits
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 24 EN25T16A rev. c , issue date: 2011 / 04 / 15 figure 20. enter ext mode enter otp mode (3ah) this flash has an extra 512 bytes otp sector, user must issue enter otp mode command to read, program or erase otp sector. after entering otp mode, the otp sector is mapping to sector 511, srp bit becomes otp_lock bit and can be read with rdsr command . program / erase command will be disabled when otp_lock bit is ?1? wrsr command will ignore the i nput data and program otp_lock bit to 1. user must clear the protect bits before enter otp mode. otp sector can only be program and erase before otp_lock bit is set to ?1? and bp [2:0] = ?000?. in otp mode, user can read other sectors, but program/erase other sectors only allowed when otp_lock bit equal to ?0?. user can use wrdi (04h) command to exit otp mode. while in otp mode, user can use sector erase (20h) command only to erase otp data. table 8. otp sector address sector sector size address range 511 512 byte 1ff000h ? 1ff1ffh note: the otp sector is mapping to sector 511 figure 21. enter otp mode
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 25 EN25T16A rev. c , issue date: 2011 / 04 / 15 power-up timing figure 22. power-up timing table 9. power-up timing and write inhibit threshold symbol parameter min. max. unit tvsl (1) vcc(min) to cs# low 10 s tpuw (1) time delay to write instruction 1 10 ms vwi (1) write inhibit voltage 1 2.5 v note: 1.the parameters are characterized only. 2. vcc (max.) is 3.6v and vcc (min.) is 2.7v initial delivery state the device is delivered with the memory array erased: all bits are set to 1 (each byte contains ffh). the status register contains 00h (all status register bits are 0).
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 26 EN25T16A rev. c , issue date: 2011 / 04 / 15 table 10. dc characteristics (t a = - 40c to 85c; v cc = 2.7-3.6v) symbol parameter test conditions min. max. unit i li input leakage current 2 a i lo output leakage current 2 a i cc1 standby current cs# = v cc , v in = v ss or v cc 20 a i cc2 deep power-down current cs# = v cc , v in = v ss or v cc 20 a clk = 0.1 v cc / 0.9 v cc at 104mhz, dq = open 25 ma i cc3 operating current (read) clk = 0.1 v cc / 0.9 v cc at 75mhz, dq = open 20 ma i cc4 operating current (pp) cs# = v cc 28 ma i cc5 operating current (wrsr) cs# = v cc 18 ma i cc6 operating current (se) cs# = v cc 25 ma i cc7 operating current (be) cs# = v cc 25 ma v il input low voltage ? 0.5 0.2 v cc v v ih input high voltage 0.7v cc v cc +0.4 v v ol output low voltage i ol = 1.6 ma 0.4 v v oh output high voltage i oh = ?100 a v cc -0.2 v table 11. ac measurement conditions symbol parameter min. max. unit c l load capacitance 20/30 pf input rise and fall times 5 ns input pulse voltages 0.2 v cc to 0.8 v cc v input timing refe rence voltages 0.3 v cc to 0.7 v cc v output timing reference voltages v cc / 2 v notes: 1. c l = 20 pf when clk = 104mhz, c l = 30 pf when clk = 75mhz, figure 23. ac measurement i/o waveform
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 27 EN25T16A rev. c , issue date: 2011 / 04 / 15 table 12. 75mhz ac characteristics (t a = ? 40c to 85c; v cc = 2.7-3.6v) symbol alt parameter min typ max unit f r f c serial clock frequency for: fast_read, pp, se, be, dp, res, wren, wrdi, wrsr d.c. 75 mhz f r serial clock frequency for read, rdsr, rdid d.c. 66 mhz t ch 1 serial clock high time 6 ns t cl 1 serial clock low time 6 ns t clch 2 serial clock rise time (slew rate) 0.1 v / ns t chcl 2 serial clock fall time (slew rate) 0.1 v / ns t slch t css cs# active setup time 5 ns t chsh cs# active hold time 5 ns t shch cs# not active setup time 5 ns t chsl cs# not active hold time 5 ns t shsl t csh cs# high time for read 100 ns t shqz 2 t dis output disable time 6 ns t clqx t ho output hold time 0 ns t dvch t dsu data in setup time 2 ns t chdx t dh data in hold time 5 ns t hlch hold# low setup time ( relative to clk ) 5 ns t hhch hold# high setup time ( relative to clk ) 5 ns t chhh hold# low hold time ( relative to clk ) 5 ns t chhl hold# high hold time ( relative to clk ) 5 ns t hlqz 2 t hz hold# low to high-z output 6 ns t hhqx 2 t lz hold# high to low-z output 6 ns t clqv t v output valid from clk 6 ns t whsl 3 write protect setup time before cs# low 20 ns t shwl 3 write protect hold time after cs# high 100 ns t dp 2 cs# high to deep power-down mode 3 s t res1 2 cs# high to standby mode without electronic signature read 3 s t res2 2 cs# high to standby mode with electronic signature read 1.8 s t w write status register cycle time 15 50 ms t pp page programming time 1.3 5 ms t se sector erase time 0.06 0.3 s t be block erase time 0.4 2 s t ce chip erase time 7 30 s note: 1. t ch + t cl must be greater than or equal to 1/ f c 2. value guaranteed by characterization, not 100% tested in production. 3. only applicable as a constraint for a write status register instruction when status register protect bit is set at 1.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 28 EN25T16A rev. c , issue date: 2011 / 04 / 15 figure 24. serial output timing figure 25. input timing figure 26. hold timing
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 29 EN25T16A rev. c , issue date: 2011 / 04 / 15 absolute maximum ratings stresses above the values so mentioned above may cause permanent damage to the device. these values are for a stress rating only and do not imply that the device should be operated at conditions up to or above these values. exposure of the device to the maximum rating values for extended periods of time may adversely affect the device reliability. parameter value unit storage temperature -65 to +150 c plastic packages -65 to +125 c output short circuit current 1 200 ma input and output voltage (with respect to ground) 2 -0.5 to +4.0 v vcc -0.5 to +4.0 v notes: 1. no more than one output shorted at a time. duration of the short circuit should not be greater than one second. 2. minimum dc voltage on input or i/o pins is ?0.5 v. during voltage transitions, inputs may undershoot v ss to ?1.0v for periods of up to 50ns and to ?2.0 v for periods of up to 20ns. see figure below. maximum dc voltage on output and i/o pins is v cc + 0.5 v. during voltage transitions, outputs may overshoot to v cc + 1.5 v for periods up to 20ns. see figure below. recommended operating ranges 1 parameter value unit ambient operating temperature industrial devices -40 to 85 c operating supply voltage vcc full: 2.7 to 3.6 v notes: 1. recommended operating ranges define those limits between which the functionality of the device is guaranteed. vcc +1.5v maximum negative overshoot waveform maximum positive overshoot waveform
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 30 EN25T16A rev. c , issue date: 2011 / 04 / 15 table 13. data retention and endurance parameter description test conditions min unit 150c 10 years data retention time 125c 20 years erase/program endurance -40 to 85 c 100k cycles table 14. capacitance ( v cc = 2.7-3.6v) parameter symbol parameter description test setup typ max unit c in input capacitance v in = 0 6 pf c out output capacitance v out = 0 8 pf note : sampled only, not 100% tested, at t a = 25c and a frequency of 20mhz.
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 31 EN25T16A rev. c , issue date: 2011 / 04 / 15 package mechanical figure 27. sop 200 mil ( official name = 208 mil ) min. nor max a 1.75 1.975 2.20 a1 0.05 0.15 0.25 a2 1.70 1.825 1.95 d 5.15 5.275 5.40 e 7.70 7.90 8.10 e1 5.15 5.275 5.40 e - - - 1.27 - - - b 0.35 0.425 0.50 l 0.5 0.65 0.80 0 0 4 0 8 0 note : 1. coplanarit y : 0.1 mm 2. max. allowable mold flash is 0.15 mm at the p k g ends, 0.25 mm between leads. symbol dimension in mm
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 32 EN25T16A rev. c , issue date: 2011 / 04 / 15 figure 28. vdfn8 ( 5x6mm ) controlling dimensions ar e in millimeters (mm). dimension in mm symbol min. nor max a 0.70 0.75 0.80 a1 0.00 0.02 0.04 a2 - - - 0.20 - - - d 5.90 6.00 6.10 e 4.90 5.00 5.10 d2 3.30 3.40 3.50 e2 3.90 4.00 4.10 e - - - 1.27 - - - b 0.35 0.40 0.45 l 0.55 0.60 0.65 note : 1. coplanarity: 0.1 mm
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 33 EN25T16A rev. c , issue date: 2011 / 04 / 15 figure 29. pdip8 min. nor max a - - - - - - 0.210 a1 0.015 - - - - - - a2 0.125 0.130 0.135 d 0.355 0.365 0.400 e 0.300 0.310 0.320 e1 0.245 0.250 0.255 l 0.115 0.130 0.150 e b 0.310 0.350 0.375 0 0715 symbol dimension in inch
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 34 EN25T16A rev. c , issue date: 2011 / 04 / 15 ordering information EN25T16A - 75 h i p packaging content p = rohs compliant temperature range i = industrial (-40 c to +85 c) package h = 8-pin 200mil sop w = 8-pin vdfn q = 8-pin pdip speed 75 = 75 mhz base part number en = eon silicon solution inc. 25t = 3v serial 4kbyte uniform-sector flash with dual data m ode 16 = 16 megabit (2048k x 8) a = version identifier
this data sheet may be revised by subsequent versions ?2004 eon silicon solution, inc., www.eons si.com or modifications due to changes in technical specifications. 35 EN25T16A rev. c , issue date: 2011 / 04 / 15 revisions list revision no description date a initial release 2010/12/23 b update write status register cycle time from 10 (typ.) /15 (max.) ms to 15 (typ.) / 30 (max.) ms on page 27. 2011/01/19 c update write status register cycle time (max.) from 30 ms to 50 ms on page 27. 2011/04/15

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